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Virtual Journal for Biomedical Optics

Virtual Journal for Biomedical Optics

| EXPLORING THE INTERFACE OF LIGHT AND BIOMEDICINE

  • Editors: Andrew Dunn and Anthony Durkin
  • Vol. 7, Iss. 7 — Jun. 25, 2012

310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection

Ning Duan, Tsung-Yang Liow, Andy Eu-Jin Lim, Liang Ding, and G. Q. Lo  »View Author Affiliations


Optics Express, Vol. 20, Issue 10, pp. 11031-11036 (2012)
http://dx.doi.org/10.1364/OE.20.011031


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Abstract

We report a normal incidence Ge/Si avalanche photodiode with separate-absorption-charge-multiplication (SACM) structure by selective epitaxial growth. By proper design of charge and multiplication layers and by optimizing the electric field distribution in the depletion region to eliminate germanium impact-ionization at high gain, a high responsivity of 12 A/W and a large gain-bandwidth product of 310 GHz have been achieved at 1550 nm.

© 2012 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(060.2330) Fiber optics and optical communications : Fiber optics communications
(040.1345) Detectors : Avalanche photodiodes (APDs)

ToC Category:
Detectors

History
Original Manuscript: January 10, 2012
Revised Manuscript: February 17, 2012
Manuscript Accepted: March 9, 2012
Published: April 27, 2012

Virtual Issues
Vol. 7, Iss. 7 Virtual Journal for Biomedical Optics

Citation
Ning Duan, Tsung-Yang Liow, Andy Eu-Jin Lim, Liang Ding, and G. Q. Lo, "310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection," Opt. Express 20, 11031-11036 (2012)
http://www.opticsinfobase.org/vjbo/abstract.cfm?URI=oe-20-10-11031


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References

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