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Virtual Journal for Biomedical Optics

Virtual Journal for Biomedical Optics


  • Editors: Andrew Dunn and Anthony Durkin
  • Vol. 7, Iss. 11 — Oct. 31, 2012

ZnCdSe/ZnCdMgSe quantum well infrared photodetector

Arvind P. Ravikumar, Adrian Alfaro-Martinez, Guopeng Chen, Kuaile Zhao, Maria C. Tamargo, Claire F. Gmachl, and Aidong Shen  »View Author Affiliations

Optics Express, Vol. 20, Issue 20, pp. 22391-22397 (2012)

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We report the design, fabrication and characterization of a II-VI Zn0.51Cd0.49Se / Zn0.45Cd0.42Mg0.13Se-based quantum well infrared photodetector (QWIP) with a bound to quasi-bound transition centered at 8.7 µm. The good growth quality of the epitaxial layers was verified by x-ray diffraction measurements. Absorption and photocurrent measurements yield results consistent with conventional III-V QWIPs. Photocurrent measurements reveal an exponential decrease with temperature. In addition, we also observe more than 4 orders of magnitude increase in photocurrent with applied bias. By compensating the drop in temperature performance with an increase in applied bias, we achieve an operating temperature of up to 140K and a responsivity of 1-10 µA/W.

© 2012 OSA

OCIS Codes
(040.4200) Detectors : Multiple quantum well
(040.5160) Detectors : Photodetectors

ToC Category:

Original Manuscript: July 12, 2012
Revised Manuscript: September 10, 2012
Manuscript Accepted: September 11, 2012
Published: September 17, 2012

Virtual Issues
Vol. 7, Iss. 11 Virtual Journal for Biomedical Optics

Arvind P. Ravikumar, Adrian Alfaro-Martinez, Guopeng Chen, Kuaile Zhao, Maria C. Tamargo, Claire F. Gmachl, and Aidong Shen, "ZnCdSe/ZnCdMgSe quantum well infrared photodetector," Opt. Express 20, 22391-22397 (2012)

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