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ZnCdSe/ZnCdMgSe quantum well infrared photodetectorArvind P. Ravikumar, Adrian Alfaro-Martinez, Guopeng Chen, Kuaile Zhao, Maria C. Tamargo, Claire F. Gmachl, and Aidong Shen »View Author Affiliations
Arvind P. Ravikumar,1,*
Adrian Alfaro-Martinez,2
Guopeng Chen,3
Kuaile Zhao,3
Maria C. Tamargo,2
Claire F. Gmachl,1
and Aidong Shen3
1Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA 2Department of Chemistry, The City College of New York, New York 10031, USA 3Department of Electrical Engineering, The City College of New York, New York 10031, USA *Corresponding author: aravikum@princeton.edu |
Optics Express, Vol. 20, Issue 20, pp. 22391-22397 (2012)
http://dx.doi.org/10.1364/OE.20.022391
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Abstract
We report the design, fabrication and characterization of a II-VI Zn0.51Cd0.49Se / Zn0.45Cd0.42Mg0.13Se-based quantum well infrared photodetector (QWIP) with a bound to quasi-bound transition centered at 8.7 µm. The good growth quality of the epitaxial layers was verified by x-ray diffraction measurements. Absorption and photocurrent measurements yield results consistent with conventional III-V QWIPs. Photocurrent measurements reveal an exponential decrease with temperature. In addition, we also observe more than 4 orders of magnitude increase in photocurrent with applied bias. By compensating the drop in temperature performance with an increase in applied bias, we achieve an operating temperature of up to 140K and a responsivity of 1-10 µA/W.
© 2012 OSA
OCIS Codes
(040.4200) Detectors : Multiple quantum well
(040.5160) Detectors : Photodetectors
ToC Category:
Detectors
History
Original Manuscript: July 12, 2012
Revised Manuscript: September 10, 2012
Manuscript Accepted: September 11, 2012
Published: September 17, 2012
Virtual Issues
Vol. 7, Iss. 11 Virtual Journal for Biomedical Optics
Citation
Arvind P. Ravikumar, Adrian Alfaro-Martinez, Guopeng Chen, Kuaile Zhao, Maria C. Tamargo, Claire F. Gmachl, and Aidong Shen, "ZnCdSe/ZnCdMgSe quantum well infrared photodetector," Opt. Express 20, 22391-22397 (2012)
http://www.opticsinfobase.org/vjbo/abstract.cfm?URI=oe-20-20-22391
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References
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- A. Shen, H. Lu, W. Charles, I. Yokomizo, M. C. Tamargo, K. J. Franz, C. Gmachl, S. K. Zhang, X. Zhou, R. R. Alfano, and H. C. Liu, “Intersubband absorption in CdSe/ZnxCdyMg1-x-ySe self-assembled quantum dot multilayers,” Appl. Phys. Lett.90(7), 071910 (2007). [CrossRef]
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- Y. Yao, A. Alfaro-Martinez, K. J. Franz, W. O. Charles, A. Shen, M. C. Tamargo, and C. F. Gmachl, “Room temperature and narrow intersubband electroluminescence from ZnCdSe/ZnCdMgSe quantum cascade laser structures,” Appl. Phys. Lett.99(4), 041113 (2011). [CrossRef]
- S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320x256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett.86(19), 193501 (2005). [CrossRef]
- O. Zakharov, A. Rubio, X. Blase, M. L. Cohen, and S. G. Louie, “Quasiparticle band structures of six II-VI compounds: ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe,” Phys. Rev. B Condens. Matter50(15), 10780–10787 (1994). [CrossRef] [PubMed]
- M. Ershov, H. C. Liu, M. Buchanan, Z. R. Wasilewski, and V. Ryzhii, “Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors,” Appl. Phys. Lett.70(4), 414–416 (1997). [CrossRef]
- Z. R. Wasilewski, H. C. Liu, and M. Buchanan, “Studies of Si segregation in GaAs using current-voltage characteristics of quantum well infrared photodetectors,” J. Vac. Sci. Technol. B12(2), 1273–1276 (1994). [CrossRef]
- H. C. Liu, Z. R. Wasilewski, M. Buchanan, and H. Chu, “Segregation of Si δ doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detectors,” Appl. Phys. Lett.63(6), 761–763 (1993). [CrossRef]
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- E. Kim, A. Madhukar, Z. Ye, and J. C. Campbell, “High detectivity InAs quantum dot infrared photodetectors,” Appl. Phys. Lett.84(17), 3277–3279 (2004). [CrossRef]
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- C. Sirtori, F. Capasso, J. Faist, and S. Scandolo, “Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells,” Phys. Rev. B Condens. Matter50(12), 8663–8674 (1994). [CrossRef] [PubMed]
- S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320x256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett.86(19), 193501 (2005). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, W. Charles, I. Yokomizo, M. Munoz, Y. Gong, G. F. Neumark, K. J. Franz, C. Gmachl, C. Y. Song, and H. C. Liu, “Study of intersubband transitions of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications,” J. Vac. Sci. Technol. B25, 1103–1107 (2007). [CrossRef]
- A. Shen, H. Lu, W. Charles, I. Yokomizo, M. C. Tamargo, K. J. Franz, C. Gmachl, S. K. Zhang, X. Zhou, R. R. Alfano, and H. C. Liu, “Intersubband absorption in CdSe/ZnxCdyMg1-x-ySe self-assembled quantum dot multilayers,” Appl. Phys. Lett.90(7), 071910 (2007). [CrossRef]
- Y. Yao, A. Alfaro-Martinez, K. J. Franz, W. O. Charles, A. Shen, M. C. Tamargo, and C. F. Gmachl, “Room temperature and narrow intersubband electroluminescence from ZnCdSe/ZnCdMgSe quantum cascade laser structures,” Appl. Phys. Lett.99(4), 041113 (2011). [CrossRef]
- K. J. Franz, W. O. Charles, A. Shen, A. J. Hoffman, M. C. Tamargo, and C. Gmachl, “ZnCdSe/ZnCdMgSe quantum cascade electroluminescence,” Appl. Phys. Lett.92(12), 121105 (2008). [CrossRef]
- B. S. Li, A. Shen, W. O. Charles, Q. Zhang, and M. C. Tamargo, “Multiple intersubband absorption in wide band gap II-VI ZnxCd1-xSe multiple quantum wells with metastable zincblende MgSe barriers,” Appl. Phys. Lett.92(26), 261104 (2008). [CrossRef]
- W. O. Charles, A. Shen, K. Franz, C. Gmachl, Q. Zhang, Y. Gong, G. F. Neumark, and M. C. Tamargo, “Growth and characterization of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se asymmetric coupled quantum well structures for quantum cascade laser applications,” J. Vac. Sci. Technol. B26, 1171–1173 (2008). [CrossRef]
- Z. Ye, J. C. Campbell, Z. Chen, E. Kim, and A. Madhukar, “InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers,” J. Appl. Phys.92(12), 7462–7468 (2002). [CrossRef]
- H. C. Liu, Z. R. Wasilewski, M. Buchanan, and H. Chu, “Segregation of Si δ doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detectors,” Appl. Phys. Lett.63(6), 761–763 (1993). [CrossRef]
- O. Zakharov, A. Rubio, X. Blase, M. L. Cohen, and S. G. Louie, “Quasiparticle band structures of six II-VI compounds: ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe,” Phys. Rev. B Condens. Matter50(15), 10780–10787 (1994). [CrossRef] [PubMed]
- E. C. Larkins, H. Schneider, S. Ehret, J. Fleißner, B. Dischler, P. Koidl, and J. D. Ralston, “Influences of MBE growth processes on photovoltaic 3-5 µm intersubband photodetectors,” IEEE Trans. Electron. Dev.41(4), 511–518 (1994). [CrossRef]
- S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320x256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett.86(19), 193501 (2005). [CrossRef]
- E. C. Larkins, H. Schneider, S. Ehret, J. Fleißner, B. Dischler, P. Koidl, and J. D. Ralston, “Influences of MBE growth processes on photovoltaic 3-5 µm intersubband photodetectors,” IEEE Trans. Electron. Dev.41(4), 511–518 (1994). [CrossRef]
- M. Ershov, H. C. Liu, M. Buchanan, Z. R. Wasilewski, and V. Ryzhii, “Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors,” Appl. Phys. Lett.70(4), 414–416 (1997). [CrossRef]
- C. Sirtori, F. Capasso, J. Faist, and S. Scandolo, “Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells,” Phys. Rev. B Condens. Matter50(12), 8663–8674 (1994). [CrossRef] [PubMed]
- E. C. Larkins, H. Schneider, S. Ehret, J. Fleißner, B. Dischler, P. Koidl, and J. D. Ralston, “Influences of MBE growth processes on photovoltaic 3-5 µm intersubband photodetectors,” IEEE Trans. Electron. Dev.41(4), 511–518 (1994). [CrossRef]
- S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320x256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett.86(19), 193501 (2005). [CrossRef]
- W. O. Charles, A. Shen, K. Franz, C. Gmachl, Q. Zhang, Y. Gong, G. F. Neumark, and M. C. Tamargo, “Growth and characterization of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se asymmetric coupled quantum well structures for quantum cascade laser applications,” J. Vac. Sci. Technol. B26, 1171–1173 (2008). [CrossRef]
- Y. Yao, A. Alfaro-Martinez, K. J. Franz, W. O. Charles, A. Shen, M. C. Tamargo, and C. F. Gmachl, “Room temperature and narrow intersubband electroluminescence from ZnCdSe/ZnCdMgSe quantum cascade laser structures,” Appl. Phys. Lett.99(4), 041113 (2011). [CrossRef]
- K. J. Franz, W. O. Charles, A. Shen, A. J. Hoffman, M. C. Tamargo, and C. Gmachl, “ZnCdSe/ZnCdMgSe quantum cascade electroluminescence,” Appl. Phys. Lett.92(12), 121105 (2008). [CrossRef]
- A. Shen, H. Lu, W. Charles, I. Yokomizo, M. C. Tamargo, K. J. Franz, C. Gmachl, S. K. Zhang, X. Zhou, R. R. Alfano, and H. C. Liu, “Intersubband absorption in CdSe/ZnxCdyMg1-x-ySe self-assembled quantum dot multilayers,” Appl. Phys. Lett.90(7), 071910 (2007). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, W. Charles, I. Yokomizo, M. Munoz, Y. Gong, G. F. Neumark, K. J. Franz, C. Gmachl, C. Y. Song, and H. C. Liu, “Study of intersubband transitions of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications,” J. Vac. Sci. Technol. B25, 1103–1107 (2007). [CrossRef]
- W. O. Charles, A. Shen, K. Franz, C. Gmachl, Q. Zhang, Y. Gong, G. F. Neumark, and M. C. Tamargo, “Growth and characterization of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se asymmetric coupled quantum well structures for quantum cascade laser applications,” J. Vac. Sci. Technol. B26, 1171–1173 (2008). [CrossRef]
- K. J. Franz, W. O. Charles, A. Shen, A. J. Hoffman, M. C. Tamargo, and C. Gmachl, “ZnCdSe/ZnCdMgSe quantum cascade electroluminescence,” Appl. Phys. Lett.92(12), 121105 (2008). [CrossRef]
- A. Shen, H. Lu, W. Charles, I. Yokomizo, M. C. Tamargo, K. J. Franz, C. Gmachl, S. K. Zhang, X. Zhou, R. R. Alfano, and H. C. Liu, “Intersubband absorption in CdSe/ZnxCdyMg1-x-ySe self-assembled quantum dot multilayers,” Appl. Phys. Lett.90(7), 071910 (2007). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, W. Charles, I. Yokomizo, M. Munoz, Y. Gong, G. F. Neumark, K. J. Franz, C. Gmachl, C. Y. Song, and H. C. Liu, “Study of intersubband transitions of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications,” J. Vac. Sci. Technol. B25, 1103–1107 (2007). [CrossRef]
- Y. Yao, A. Alfaro-Martinez, K. J. Franz, W. O. Charles, A. Shen, M. C. Tamargo, and C. F. Gmachl, “Room temperature and narrow intersubband electroluminescence from ZnCdSe/ZnCdMgSe quantum cascade laser structures,” Appl. Phys. Lett.99(4), 041113 (2011). [CrossRef]
- W. O. Charles, A. Shen, K. Franz, C. Gmachl, Q. Zhang, Y. Gong, G. F. Neumark, and M. C. Tamargo, “Growth and characterization of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se asymmetric coupled quantum well structures for quantum cascade laser applications,” J. Vac. Sci. Technol. B26, 1171–1173 (2008). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, W. Charles, I. Yokomizo, M. Munoz, Y. Gong, G. F. Neumark, K. J. Franz, C. Gmachl, C. Y. Song, and H. C. Liu, “Study of intersubband transitions of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications,” J. Vac. Sci. Technol. B25, 1103–1107 (2007). [CrossRef]
- S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320x256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett.86(19), 193501 (2005). [CrossRef]
- K. J. Franz, W. O. Charles, A. Shen, A. J. Hoffman, M. C. Tamargo, and C. Gmachl, “ZnCdSe/ZnCdMgSe quantum cascade electroluminescence,” Appl. Phys. Lett.92(12), 121105 (2008). [CrossRef]
- E. Kim, A. Madhukar, Z. Ye, and J. C. Campbell, “High detectivity InAs quantum dot infrared photodetectors,” Appl. Phys. Lett.84(17), 3277–3279 (2004). [CrossRef]
- Z. Ye, J. C. Campbell, Z. Chen, E. Kim, and A. Madhukar, “InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers,” J. Appl. Phys.92(12), 7462–7468 (2002). [CrossRef]
- E. C. Larkins, H. Schneider, S. Ehret, J. Fleißner, B. Dischler, P. Koidl, and J. D. Ralston, “Influences of MBE growth processes on photovoltaic 3-5 µm intersubband photodetectors,” IEEE Trans. Electron. Dev.41(4), 511–518 (1994). [CrossRef]
- S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320x256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett.86(19), 193501 (2005). [CrossRef]
- E. C. Larkins, H. Schneider, S. Ehret, J. Fleißner, B. Dischler, P. Koidl, and J. D. Ralston, “Influences of MBE growth processes on photovoltaic 3-5 µm intersubband photodetectors,” IEEE Trans. Electron. Dev.41(4), 511–518 (1994). [CrossRef]
- B. S. Li, A. Shen, W. O. Charles, Q. Zhang, and M. C. Tamargo, “Multiple intersubband absorption in wide band gap II-VI ZnxCd1-xSe multiple quantum wells with metastable zincblende MgSe barriers,” Appl. Phys. Lett.92(26), 261104 (2008). [CrossRef]
- S. Tsao, H. Lim, W. Zhang, and M. Razeghi, “High operating temperature 320x256 middle-wavelength infrared focal plane array imaging based on an InAs/InGaAs/InAlAs/InP quantum dot infrared photodetector,” Appl. Phys. Lett.90(20), 201109 (2007). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, W. Charles, I. Yokomizo, M. Munoz, Y. Gong, G. F. Neumark, K. J. Franz, C. Gmachl, C. Y. Song, and H. C. Liu, “Study of intersubband transitions of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications,” J. Vac. Sci. Technol. B25, 1103–1107 (2007). [CrossRef]
- A. Shen, H. Lu, W. Charles, I. Yokomizo, M. C. Tamargo, K. J. Franz, C. Gmachl, S. K. Zhang, X. Zhou, R. R. Alfano, and H. C. Liu, “Intersubband absorption in CdSe/ZnxCdyMg1-x-ySe self-assembled quantum dot multilayers,” Appl. Phys. Lett.90(7), 071910 (2007). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, C. Y. Song, H. C. Liu, S. K. Zhang, R. R. Alfano, and M. Munoz, “Midinfrared intersubband absorption in ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum well structures,” Appl. Phys. Lett.89, 131903 (2006). [CrossRef]
- M. Ershov, H. C. Liu, M. Buchanan, Z. R. Wasilewski, and V. Ryzhii, “Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors,” Appl. Phys. Lett.70(4), 414–416 (1997). [CrossRef]
- Z. R. Wasilewski, H. C. Liu, and M. Buchanan, “Studies of Si segregation in GaAs using current-voltage characteristics of quantum well infrared photodetectors,” J. Vac. Sci. Technol. B12(2), 1273–1276 (1994). [CrossRef]
- H. C. Liu, Z. R. Wasilewski, M. Buchanan, and H. Chu, “Segregation of Si δ doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detectors,” Appl. Phys. Lett.63(6), 761–763 (1993). [CrossRef]
- S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320x256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett.86(19), 193501 (2005). [CrossRef]
- O. Zakharov, A. Rubio, X. Blase, M. L. Cohen, and S. G. Louie, “Quasiparticle band structures of six II-VI compounds: ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe,” Phys. Rev. B Condens. Matter50(15), 10780–10787 (1994). [CrossRef] [PubMed]
- H. Lu, A. Shen, M. C. Tamargo, W. Charles, I. Yokomizo, M. Munoz, Y. Gong, G. F. Neumark, K. J. Franz, C. Gmachl, C. Y. Song, and H. C. Liu, “Study of intersubband transitions of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications,” J. Vac. Sci. Technol. B25, 1103–1107 (2007). [CrossRef]
- A. Shen, H. Lu, W. Charles, I. Yokomizo, M. C. Tamargo, K. J. Franz, C. Gmachl, S. K. Zhang, X. Zhou, R. R. Alfano, and H. C. Liu, “Intersubband absorption in CdSe/ZnxCdyMg1-x-ySe self-assembled quantum dot multilayers,” Appl. Phys. Lett.90(7), 071910 (2007). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, C. Y. Song, H. C. Liu, S. K. Zhang, R. R. Alfano, and M. Munoz, “Midinfrared intersubband absorption in ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum well structures,” Appl. Phys. Lett.89, 131903 (2006). [CrossRef]
- M. Sohel, X. Zhou, H. Lu, M. N. Perez-Paz, M. Tamargo, and M. Muñoz, “Optical characterization and evaluation of the conduction band offset for ZnCdSe/ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxy,” J. Vac. Sci. Technol. B23(3), 1209–1211 (2005). [CrossRef]
- E. Kim, A. Madhukar, Z. Ye, and J. C. Campbell, “High detectivity InAs quantum dot infrared photodetectors,” Appl. Phys. Lett.84(17), 3277–3279 (2004). [CrossRef]
- Z. Ye, J. C. Campbell, Z. Chen, E. Kim, and A. Madhukar, “InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers,” J. Appl. Phys.92(12), 7462–7468 (2002). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, W. Charles, I. Yokomizo, M. Munoz, Y. Gong, G. F. Neumark, K. J. Franz, C. Gmachl, C. Y. Song, and H. C. Liu, “Study of intersubband transitions of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications,” J. Vac. Sci. Technol. B25, 1103–1107 (2007). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, C. Y. Song, H. C. Liu, S. K. Zhang, R. R. Alfano, and M. Munoz, “Midinfrared intersubband absorption in ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum well structures,” Appl. Phys. Lett.89, 131903 (2006). [CrossRef]
- M. Sohel, X. Zhou, H. Lu, M. N. Perez-Paz, M. Tamargo, and M. Muñoz, “Optical characterization and evaluation of the conduction band offset for ZnCdSe/ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxy,” J. Vac. Sci. Technol. B23(3), 1209–1211 (2005). [CrossRef]
- W. O. Charles, A. Shen, K. Franz, C. Gmachl, Q. Zhang, Y. Gong, G. F. Neumark, and M. C. Tamargo, “Growth and characterization of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se asymmetric coupled quantum well structures for quantum cascade laser applications,” J. Vac. Sci. Technol. B26, 1171–1173 (2008). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, W. Charles, I. Yokomizo, M. Munoz, Y. Gong, G. F. Neumark, K. J. Franz, C. Gmachl, C. Y. Song, and H. C. Liu, “Study of intersubband transitions of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications,” J. Vac. Sci. Technol. B25, 1103–1107 (2007). [CrossRef]
- M. Sohel, X. Zhou, H. Lu, M. N. Perez-Paz, M. Tamargo, and M. Muñoz, “Optical characterization and evaluation of the conduction band offset for ZnCdSe/ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxy,” J. Vac. Sci. Technol. B23(3), 1209–1211 (2005). [CrossRef]
- E. C. Larkins, H. Schneider, S. Ehret, J. Fleißner, B. Dischler, P. Koidl, and J. D. Ralston, “Influences of MBE growth processes on photovoltaic 3-5 µm intersubband photodetectors,” IEEE Trans. Electron. Dev.41(4), 511–518 (1994). [CrossRef]
- S. Tsao, H. Lim, W. Zhang, and M. Razeghi, “High operating temperature 320x256 middle-wavelength infrared focal plane array imaging based on an InAs/InGaAs/InAlAs/InP quantum dot infrared photodetector,” Appl. Phys. Lett.90(20), 201109 (2007). [CrossRef]
- O. Zakharov, A. Rubio, X. Blase, M. L. Cohen, and S. G. Louie, “Quasiparticle band structures of six II-VI compounds: ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe,” Phys. Rev. B Condens. Matter50(15), 10780–10787 (1994). [CrossRef] [PubMed]
- M. Ershov, H. C. Liu, M. Buchanan, Z. R. Wasilewski, and V. Ryzhii, “Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors,” Appl. Phys. Lett.70(4), 414–416 (1997). [CrossRef]
- C. Sirtori, F. Capasso, J. Faist, and S. Scandolo, “Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells,” Phys. Rev. B Condens. Matter50(12), 8663–8674 (1994). [CrossRef] [PubMed]
- E. C. Larkins, H. Schneider, S. Ehret, J. Fleißner, B. Dischler, P. Koidl, and J. D. Ralston, “Influences of MBE growth processes on photovoltaic 3-5 µm intersubband photodetectors,” IEEE Trans. Electron. Dev.41(4), 511–518 (1994). [CrossRef]
- Y. Yao, A. Alfaro-Martinez, K. J. Franz, W. O. Charles, A. Shen, M. C. Tamargo, and C. F. Gmachl, “Room temperature and narrow intersubband electroluminescence from ZnCdSe/ZnCdMgSe quantum cascade laser structures,” Appl. Phys. Lett.99(4), 041113 (2011). [CrossRef]
- K. J. Franz, W. O. Charles, A. Shen, A. J. Hoffman, M. C. Tamargo, and C. Gmachl, “ZnCdSe/ZnCdMgSe quantum cascade electroluminescence,” Appl. Phys. Lett.92(12), 121105 (2008). [CrossRef]
- B. S. Li, A. Shen, W. O. Charles, Q. Zhang, and M. C. Tamargo, “Multiple intersubband absorption in wide band gap II-VI ZnxCd1-xSe multiple quantum wells with metastable zincblende MgSe barriers,” Appl. Phys. Lett.92(26), 261104 (2008). [CrossRef]
- W. O. Charles, A. Shen, K. Franz, C. Gmachl, Q. Zhang, Y. Gong, G. F. Neumark, and M. C. Tamargo, “Growth and characterization of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se asymmetric coupled quantum well structures for quantum cascade laser applications,” J. Vac. Sci. Technol. B26, 1171–1173 (2008). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, W. Charles, I. Yokomizo, M. Munoz, Y. Gong, G. F. Neumark, K. J. Franz, C. Gmachl, C. Y. Song, and H. C. Liu, “Study of intersubband transitions of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications,” J. Vac. Sci. Technol. B25, 1103–1107 (2007). [CrossRef]
- A. Shen, H. Lu, W. Charles, I. Yokomizo, M. C. Tamargo, K. J. Franz, C. Gmachl, S. K. Zhang, X. Zhou, R. R. Alfano, and H. C. Liu, “Intersubband absorption in CdSe/ZnxCdyMg1-x-ySe self-assembled quantum dot multilayers,” Appl. Phys. Lett.90(7), 071910 (2007). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, C. Y. Song, H. C. Liu, S. K. Zhang, R. R. Alfano, and M. Munoz, “Midinfrared intersubband absorption in ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum well structures,” Appl. Phys. Lett.89, 131903 (2006). [CrossRef]
- C. Sirtori, F. Capasso, J. Faist, and S. Scandolo, “Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells,” Phys. Rev. B Condens. Matter50(12), 8663–8674 (1994). [CrossRef] [PubMed]
- M. Sohel, X. Zhou, H. Lu, M. N. Perez-Paz, M. Tamargo, and M. Muñoz, “Optical characterization and evaluation of the conduction band offset for ZnCdSe/ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxy,” J. Vac. Sci. Technol. B23(3), 1209–1211 (2005). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, W. Charles, I. Yokomizo, M. Munoz, Y. Gong, G. F. Neumark, K. J. Franz, C. Gmachl, C. Y. Song, and H. C. Liu, “Study of intersubband transitions of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications,” J. Vac. Sci. Technol. B25, 1103–1107 (2007). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, C. Y. Song, H. C. Liu, S. K. Zhang, R. R. Alfano, and M. Munoz, “Midinfrared intersubband absorption in ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum well structures,” Appl. Phys. Lett.89, 131903 (2006). [CrossRef]
- S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320x256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett.86(19), 193501 (2005). [CrossRef]
- M. Sohel, X. Zhou, H. Lu, M. N. Perez-Paz, M. Tamargo, and M. Muñoz, “Optical characterization and evaluation of the conduction band offset for ZnCdSe/ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxy,” J. Vac. Sci. Technol. B23(3), 1209–1211 (2005). [CrossRef]
- Y. Yao, A. Alfaro-Martinez, K. J. Franz, W. O. Charles, A. Shen, M. C. Tamargo, and C. F. Gmachl, “Room temperature and narrow intersubband electroluminescence from ZnCdSe/ZnCdMgSe quantum cascade laser structures,” Appl. Phys. Lett.99(4), 041113 (2011). [CrossRef]
- K. J. Franz, W. O. Charles, A. Shen, A. J. Hoffman, M. C. Tamargo, and C. Gmachl, “ZnCdSe/ZnCdMgSe quantum cascade electroluminescence,” Appl. Phys. Lett.92(12), 121105 (2008). [CrossRef]
- B. S. Li, A. Shen, W. O. Charles, Q. Zhang, and M. C. Tamargo, “Multiple intersubband absorption in wide band gap II-VI ZnxCd1-xSe multiple quantum wells with metastable zincblende MgSe barriers,” Appl. Phys. Lett.92(26), 261104 (2008). [CrossRef]
- W. O. Charles, A. Shen, K. Franz, C. Gmachl, Q. Zhang, Y. Gong, G. F. Neumark, and M. C. Tamargo, “Growth and characterization of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se asymmetric coupled quantum well structures for quantum cascade laser applications,” J. Vac. Sci. Technol. B26, 1171–1173 (2008). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, W. Charles, I. Yokomizo, M. Munoz, Y. Gong, G. F. Neumark, K. J. Franz, C. Gmachl, C. Y. Song, and H. C. Liu, “Study of intersubband transitions of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications,” J. Vac. Sci. Technol. B25, 1103–1107 (2007). [CrossRef]
- A. Shen, H. Lu, W. Charles, I. Yokomizo, M. C. Tamargo, K. J. Franz, C. Gmachl, S. K. Zhang, X. Zhou, R. R. Alfano, and H. C. Liu, “Intersubband absorption in CdSe/ZnxCdyMg1-x-ySe self-assembled quantum dot multilayers,” Appl. Phys. Lett.90(7), 071910 (2007). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, C. Y. Song, H. C. Liu, S. K. Zhang, R. R. Alfano, and M. Munoz, “Midinfrared intersubband absorption in ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum well structures,” Appl. Phys. Lett.89, 131903 (2006). [CrossRef]
- S. Tsao, H. Lim, W. Zhang, and M. Razeghi, “High operating temperature 320x256 middle-wavelength infrared focal plane array imaging based on an InAs/InGaAs/InAlAs/InP quantum dot infrared photodetector,” Appl. Phys. Lett.90(20), 201109 (2007). [CrossRef]
- S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320x256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett.86(19), 193501 (2005). [CrossRef]
- S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320x256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett.86(19), 193501 (2005). [CrossRef]
- M. Ershov, H. C. Liu, M. Buchanan, Z. R. Wasilewski, and V. Ryzhii, “Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors,” Appl. Phys. Lett.70(4), 414–416 (1997). [CrossRef]
- Z. R. Wasilewski, H. C. Liu, and M. Buchanan, “Studies of Si segregation in GaAs using current-voltage characteristics of quantum well infrared photodetectors,” J. Vac. Sci. Technol. B12(2), 1273–1276 (1994). [CrossRef]
- H. C. Liu, Z. R. Wasilewski, M. Buchanan, and H. Chu, “Segregation of Si δ doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detectors,” Appl. Phys. Lett.63(6), 761–763 (1993). [CrossRef]
- Y. Yao, A. Alfaro-Martinez, K. J. Franz, W. O. Charles, A. Shen, M. C. Tamargo, and C. F. Gmachl, “Room temperature and narrow intersubband electroluminescence from ZnCdSe/ZnCdMgSe quantum cascade laser structures,” Appl. Phys. Lett.99(4), 041113 (2011). [CrossRef]
- E. Kim, A. Madhukar, Z. Ye, and J. C. Campbell, “High detectivity InAs quantum dot infrared photodetectors,” Appl. Phys. Lett.84(17), 3277–3279 (2004). [CrossRef]
- Z. Ye, J. C. Campbell, Z. Chen, E. Kim, and A. Madhukar, “InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers,” J. Appl. Phys.92(12), 7462–7468 (2002). [CrossRef]
- A. Shen, H. Lu, W. Charles, I. Yokomizo, M. C. Tamargo, K. J. Franz, C. Gmachl, S. K. Zhang, X. Zhou, R. R. Alfano, and H. C. Liu, “Intersubband absorption in CdSe/ZnxCdyMg1-x-ySe self-assembled quantum dot multilayers,” Appl. Phys. Lett.90(7), 071910 (2007). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, W. Charles, I. Yokomizo, M. Munoz, Y. Gong, G. F. Neumark, K. J. Franz, C. Gmachl, C. Y. Song, and H. C. Liu, “Study of intersubband transitions of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications,” J. Vac. Sci. Technol. B25, 1103–1107 (2007). [CrossRef]
- O. Zakharov, A. Rubio, X. Blase, M. L. Cohen, and S. G. Louie, “Quasiparticle band structures of six II-VI compounds: ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe,” Phys. Rev. B Condens. Matter50(15), 10780–10787 (1994). [CrossRef] [PubMed]
- W. O. Charles, A. Shen, K. Franz, C. Gmachl, Q. Zhang, Y. Gong, G. F. Neumark, and M. C. Tamargo, “Growth and characterization of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se asymmetric coupled quantum well structures for quantum cascade laser applications,” J. Vac. Sci. Technol. B26, 1171–1173 (2008). [CrossRef]
- B. S. Li, A. Shen, W. O. Charles, Q. Zhang, and M. C. Tamargo, “Multiple intersubband absorption in wide band gap II-VI ZnxCd1-xSe multiple quantum wells with metastable zincblende MgSe barriers,” Appl. Phys. Lett.92(26), 261104 (2008). [CrossRef]
- A. Shen, H. Lu, W. Charles, I. Yokomizo, M. C. Tamargo, K. J. Franz, C. Gmachl, S. K. Zhang, X. Zhou, R. R. Alfano, and H. C. Liu, “Intersubband absorption in CdSe/ZnxCdyMg1-x-ySe self-assembled quantum dot multilayers,” Appl. Phys. Lett.90(7), 071910 (2007). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, C. Y. Song, H. C. Liu, S. K. Zhang, R. R. Alfano, and M. Munoz, “Midinfrared intersubband absorption in ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum well structures,” Appl. Phys. Lett.89, 131903 (2006). [CrossRef]
- S. Tsao, H. Lim, W. Zhang, and M. Razeghi, “High operating temperature 320x256 middle-wavelength infrared focal plane array imaging based on an InAs/InGaAs/InAlAs/InP quantum dot infrared photodetector,” Appl. Phys. Lett.90(20), 201109 (2007). [CrossRef]
- A. Shen, H. Lu, W. Charles, I. Yokomizo, M. C. Tamargo, K. J. Franz, C. Gmachl, S. K. Zhang, X. Zhou, R. R. Alfano, and H. C. Liu, “Intersubband absorption in CdSe/ZnxCdyMg1-x-ySe self-assembled quantum dot multilayers,” Appl. Phys. Lett.90(7), 071910 (2007). [CrossRef]
- M. Sohel, X. Zhou, H. Lu, M. N. Perez-Paz, M. Tamargo, and M. Muñoz, “Optical characterization and evaluation of the conduction band offset for ZnCdSe/ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxy,” J. Vac. Sci. Technol. B23(3), 1209–1211 (2005). [CrossRef]
- S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320x256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett.86(19), 193501 (2005). [CrossRef]
Appl. Phys. Lett.
- H. Lu, A. Shen, M. C. Tamargo, C. Y. Song, H. C. Liu, S. K. Zhang, R. R. Alfano, and M. Munoz, “Midinfrared intersubband absorption in ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum well structures,” Appl. Phys. Lett.89, 131903 (2006). [CrossRef]
- B. S. Li, A. Shen, W. O. Charles, Q. Zhang, and M. C. Tamargo, “Multiple intersubband absorption in wide band gap II-VI ZnxCd1-xSe multiple quantum wells with metastable zincblende MgSe barriers,” Appl. Phys. Lett.92(26), 261104 (2008). [CrossRef]
- A. Shen, H. Lu, W. Charles, I. Yokomizo, M. C. Tamargo, K. J. Franz, C. Gmachl, S. K. Zhang, X. Zhou, R. R. Alfano, and H. C. Liu, “Intersubband absorption in CdSe/ZnxCdyMg1-x-ySe self-assembled quantum dot multilayers,” Appl. Phys. Lett.90(7), 071910 (2007). [CrossRef]
- K. J. Franz, W. O. Charles, A. Shen, A. J. Hoffman, M. C. Tamargo, and C. Gmachl, “ZnCdSe/ZnCdMgSe quantum cascade electroluminescence,” Appl. Phys. Lett.92(12), 121105 (2008). [CrossRef]
- Y. Yao, A. Alfaro-Martinez, K. J. Franz, W. O. Charles, A. Shen, M. C. Tamargo, and C. F. Gmachl, “Room temperature and narrow intersubband electroluminescence from ZnCdSe/ZnCdMgSe quantum cascade laser structures,” Appl. Phys. Lett.99(4), 041113 (2011). [CrossRef]
- S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320x256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett.86(19), 193501 (2005). [CrossRef]
- S. Tsao, H. Lim, W. Zhang, and M. Razeghi, “High operating temperature 320x256 middle-wavelength infrared focal plane array imaging based on an InAs/InGaAs/InAlAs/InP quantum dot infrared photodetector,” Appl. Phys. Lett.90(20), 201109 (2007). [CrossRef]
- H. C. Liu, Z. R. Wasilewski, M. Buchanan, and H. Chu, “Segregation of Si δ doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detectors,” Appl. Phys. Lett.63(6), 761–763 (1993). [CrossRef]
- E. Kim, A. Madhukar, Z. Ye, and J. C. Campbell, “High detectivity InAs quantum dot infrared photodetectors,” Appl. Phys. Lett.84(17), 3277–3279 (2004). [CrossRef]
- M. Ershov, H. C. Liu, M. Buchanan, Z. R. Wasilewski, and V. Ryzhii, “Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors,” Appl. Phys. Lett.70(4), 414–416 (1997). [CrossRef]
IEEE Trans. Electron. Dev.
- E. C. Larkins, H. Schneider, S. Ehret, J. Fleißner, B. Dischler, P. Koidl, and J. D. Ralston, “Influences of MBE growth processes on photovoltaic 3-5 µm intersubband photodetectors,” IEEE Trans. Electron. Dev.41(4), 511–518 (1994). [CrossRef]
J. Appl. Phys.
- Z. Ye, J. C. Campbell, Z. Chen, E. Kim, and A. Madhukar, “InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers,” J. Appl. Phys.92(12), 7462–7468 (2002). [CrossRef]
J. Vac. Sci. Technol. B
- Z. R. Wasilewski, H. C. Liu, and M. Buchanan, “Studies of Si segregation in GaAs using current-voltage characteristics of quantum well infrared photodetectors,” J. Vac. Sci. Technol. B12(2), 1273–1276 (1994). [CrossRef]
- H. Lu, A. Shen, M. C. Tamargo, W. Charles, I. Yokomizo, M. Munoz, Y. Gong, G. F. Neumark, K. J. Franz, C. Gmachl, C. Y. Song, and H. C. Liu, “Study of intersubband transitions of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications,” J. Vac. Sci. Technol. B25, 1103–1107 (2007). [CrossRef]
- W. O. Charles, A. Shen, K. Franz, C. Gmachl, Q. Zhang, Y. Gong, G. F. Neumark, and M. C. Tamargo, “Growth and characterization of ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se asymmetric coupled quantum well structures for quantum cascade laser applications,” J. Vac. Sci. Technol. B26, 1171–1173 (2008). [CrossRef]
- M. Sohel, X. Zhou, H. Lu, M. N. Perez-Paz, M. Tamargo, and M. Muñoz, “Optical characterization and evaluation of the conduction band offset for ZnCdSe/ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxy,” J. Vac. Sci. Technol. B23(3), 1209–1211 (2005). [CrossRef]
Phys. Rev. B Condens. Matter
- O. Zakharov, A. Rubio, X. Blase, M. L. Cohen, and S. G. Louie, “Quasiparticle band structures of six II-VI compounds: ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe,” Phys. Rev. B Condens. Matter50(15), 10780–10787 (1994). [CrossRef] [PubMed]
- C. Sirtori, F. Capasso, J. Faist, and S. Scandolo, “Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells,” Phys. Rev. B Condens. Matter50(12), 8663–8674 (1994). [CrossRef] [PubMed]
Other
- S. D. Gunapala and S. V. Bandara, “Quantum Well Infrared Photodetector (QWIP) Focal Plane Arrays,” in Intersubband Transitions in Quantum Wells: Physics and Device Applications I, H.C. Liu, and F. Capasso, eds. (Academic Press, 2000), pp. 197–282.
2011, Yao, Appl. Phys. Lett.
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