Characterization of high refractive index semiconductor films by surface plasmon resonance
Applied Optics, Vol. 45, Issue 25, pp. 6640-6645 (2006)
http://dx.doi.org/10.1364/AO.45.006640
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Abstract
Si-based surface plasmon resonance (SPR) in the Kretschmann–Raether geometry is considered as a platform for the optical measurement of high refractive index films. The implementation of the SPR effect becomes possible due to the relatively high index of refraction of Si compared to most materials. As examples we study the SPR responses for some important semiconductor-based films, including laser-ablated porous silicon and thin germanium films. Using SPR data, we determine the refractive indices of these films for different parameters (thickness and porosity) and ambiences. We also discuss novel SPR biosensor architectures with the use of these solid films.
© 2006 Optical Society of America
OCIS Codes
(120.4820) Instrumentation, measurement, and metrology : Optical systems
(240.6680) Optics at surfaces : Surface plasmons
(310.6860) Thin films : Thin films, optical properties
History
Original Manuscript: January 27, 2006
Revised Manuscript: March 29, 2006
Manuscript Accepted: April 5, 2006
Virtual Issues
Vol. 1, Iss. 10 Virtual Journal for Biomedical Optics
Citation
Sergiy Patskovsky, Souleymane Bah, Michel Meunier, and Andrei V. Kabashin, "Characterization of high refractive index semiconductor films by surface plasmon resonance," Appl. Opt. 45, 6640-6645 (2006)
http://www.opticsinfobase.org/vjbo/abstract.cfm?URI=ao-45-25-6640
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