Erbium doped GaSe crystal for mid-IR applications
Optics Express, Vol. 14, Issue 12, pp. 5484-5491 (2006)
http://dx.doi.org/10.1364/OE.14.005484
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Abstract
We reported a type-I difference-frequency generator (DFG), based on erbium doped GaSe (Er:GaSe) crystals as a coherent infrared source tunable from 2.4 µm to 28 µm. The two mixing beams used for the DFG are a tunable near infrared output (1.1–1.8 µm) from an optical parametric amplifier (OPA) and the fundamental beam of a picosecond Nd:YAG laser at 1.064 µm. The system can produce a maximum output pulse energy of 5 µJ at wavelength of 3.5 µm, corresponding to a photon conversion efficiency of 8 % at a pump intensity of 1.7 GW/cm2. The nonlinear coefficient (deff ) of 0.5 atom % erbium doped GaSe crystal was found to be 55.3 pm/V or 24 % higher than that of a pure GaSe crystal. The improvement of deff is attributed to the substitutive and interstitial doping of Er ion in GaSe unit cell. The optical properties of GaSe influenced by the erbium doping are also presented.
© 2006 Optical Society of America
OCIS Codes
(190.2620) Nonlinear optics : Harmonic generation and mixing
(190.4400) Nonlinear optics : Nonlinear optics, materials
(320.7100) Ultrafast optics : Ultrafast measurements
(320.7110) Ultrafast optics : Ultrafast nonlinear optics
ToC Category:
Nonlinear Optics
History
Original Manuscript: April 10, 2006
Revised Manuscript: May 30, 2006
Manuscript Accepted: May 30, 2006
Published: June 12, 2006
Virtual Issues
Vol. 1, Iss. 7 Virtual Journal for Biomedical Optics
Citation
Yu-Kuei Hsu, Ching-Wei Chen, Jung Y. Huang, Ci-Ling Pan, Jing-Yuan Zhang, and Chen-Shiung Chang, "Erbium doped GaSe crystal for mid-IR applications," Opt. Express 14, 5484-5491 (2006)
http://www.opticsinfobase.org/vjbo/abstract.cfm?URI=oe-14-12-5484
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