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Virtual Journal for Biomedical Optics

Virtual Journal for Biomedical Optics


  • Editor: Gregory W. Faris
  • Vol. 4, Iss. 10 — Oct. 2, 2009

Numerical analysis of the propagation properties of subwavelength semiconductor slit in the terahertz region

Xiao-Yong He  »View Author Affiliations

Optics Express, Vol. 17, Issue 17, pp. 15359-15371 (2009)

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The propagation properties of terahertz (THz) waves passing through heavily doped semiconductor slit have been numerically investigated by using the transfer matrix method. The effects of geometrical parameters, carrier concentration, and dielectric materials filling in the slit have been considered. The contour for carrier concentration and slit width show that as slit width and carrier concentration decreases, the effective indices increase and the propagation lengths decrease. For the case of water filling in the slit, temperature has more effect on the imaginary part of propagation constant than the real part. Most of the energy stored in the slit is in the form of electric energy, which firstly decreases and then increases with the decreasing of slit width. It is expected that the semiconductor slit structure is very useful for the practical applications of THz waves in the fields of biological specimen analysis and medical diagnosis.

© 2009 OSA

OCIS Codes
(240.6680) Optics at surfaces : Surface plasmons
(260.3090) Physical optics : Infrared, far
(040.2235) Detectors : Far infrared or terahertz
(050.6624) Diffraction and gratings : Subwavelength structures

ToC Category:
Diffraction and Gratings

Original Manuscript: June 25, 2009
Revised Manuscript: July 24, 2009
Manuscript Accepted: July 24, 2009
Published: August 14, 2009

Virtual Issues
Vol. 4, Iss. 10 Virtual Journal for Biomedical Optics

Xiao-Yong He, "Numerical analysis of the propagation properties of subwavelength semiconductor slit in the terahertz region," Opt. Express 17, 15359-15371 (2009)

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