Trap profiles of projector based optoelectronic tweezers (OET) with HeLa cells
Optics Express, Vol. 17, Issue 7, pp. 5231-5239 (2009)
http://dx.doi.org/10.1364/OE.17.005231
Acrobat PDF (1273 KB)
Abstract
In this paper we present trap profile measurements for HeLa cells in Optoelectronic Tweezers (OET) based on a data projector. The data projector is used as a light source to illuminate amorphous Si creating virtual electrodes which are used to trap particles through dielectrophoresis. We show that although the trap stiffness is typically greater at the edges of the optical spot it is possible to create a trap with constant trap stiffness by reducing the trap’s size until it is similar to the object being trapped. We have successfully created a trap for HeLa cells with a constant trap stiffness of 3x10-6 Nm-1 (capable of moving the cell up to 50μms-1) with a 12μm diameter trap. We also calculate the depth of the potential well that the cell will experience due to the trap and find that it to be 1.6x10-16J (4x104 kBT).
© 2009 Optical Society of America
OCIS Codes
(350.4855) Other areas of optics : Optical tweezers or optical manipulation
ToC Category:
Optical Trapping and Manipulation
History
Original Manuscript: January 5, 2009
Revised Manuscript: March 12, 2009
Manuscript Accepted: March 14, 2009
Published: March 18, 2009
Virtual Issues
Vol. 4, Iss. 5 Virtual Journal for Biomedical Optics
Citation
Steven L. Neale, Aaron T. Ohta, Hsan-Yin Hsu, Justin K. Valley, Arash Jamshidi, and Ming C. Wu, "Trap profiles of projector based optoelectronic tweezers (OET) with HeLa cells," Opt. Express 17, 5231-5239 (2009)
http://www.opticsinfobase.org/vjbo/abstract.cfm?URI=oe-17-7-5231
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