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Virtual Journal for Biomedical Optics

Virtual Journal for Biomedical Optics


  • Editors: Andrew Dunn and Anthony Durkin
  • Vol. 6, Iss. 7 — Jul. 27, 2011

1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates

Ting Wang, Huiyun Liu, Andrew Lee, Francesca Pozzi, and Alwyn Seeds  »View Author Affiliations

Optics Express, Vol. 19, Issue 12, pp. 11381-11386 (2011)

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We report the first operation of an electrically pumped 1.3-μm InAs/GaAs quantum-dot laser epitaxially grown on a Si (100) substrate. The laser structure was grown directly on the Si substrate by molecular beam epitaxy. Lasing at 1.302 μm has been demonstrated with threshold current density of 725 A/cm2 and output power of ~26 mW for broad-area lasers with as-cleaved facets at room temperature. These results are directly attributable to the optimized growth temperature of the initial GaAs nucleation layer.

© 2011 OSA

OCIS Codes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.5300) Optoelectronics : Photonic integrated circuits
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:

Original Manuscript: April 4, 2011
Revised Manuscript: May 11, 2011
Manuscript Accepted: May 11, 2011
Published: May 26, 2011

Virtual Issues
Vol. 6, Iss. 7 Virtual Journal for Biomedical Optics

Ting Wang, Huiyun Liu, Andrew Lee, Francesca Pozzi, and Alwyn Seeds, "1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates," Opt. Express 19, 11381-11386 (2011)

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