Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency

doi:10.1364/OE.19.003637

Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency

Ji Hye Kang, Jae Hyoung Ryu, Hyun Kyu Kim, Hee Yun Kim, Nam Han, Young Jae Park, Periyayya Uthirakumar, and Chang-Hee Hong »View Author Affiliations

Optics Express, Vol. 19, Issue 4, pp. 3637-3646 (2011)
http://dx.doi.org/10.1364/OE.19.003637

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Abstract

The various surface texturing effects of InGaN light emitting diodes (LEDs) have been investigated by comparison of experimented data and simulated data. The single-layer and double-layer texturing were performed with the help of ITO nanospheres using wet etching, where the ITO ohmic contact layer and the p-GaN layer are textured using ITO nanospheres as an etch mask. In case of single-layer texturing, p-type GaN layer texturing was more effective than ITO ohmic contact layer texturing. The maximum enhancement of wall-plug efficiency of double-layered textured LEDs is 40% more than conventional LEDs, after packaging at an injected current of 20 mA. The increase of light scattering at the textured GaN surfaces is a major reason for increasing the light extraction efficiency of LEDs.

OCIS Codes
(190.5890) Nonlinear optics : Scattering, stimulated
(250.0250) Optoelectronics : Optoelectronics
(290.4210) Scattering : Multiple scattering

ToC Category:
Optical Devices

History
Original Manuscript: October 25, 2010
Revised Manuscript: January 21, 2011
Manuscript Accepted: January 30, 2011
Published: February 10, 2011

Virtual Issues
Vol. 6, Iss. 3 Virtual Journal for Biomedical Optics

Citation
Ji Hye Kang, Jae Hyoung Ryu, Hyun Kyu Kim, Hee Yun Kim, Nam Han, Young Jae Park, Periyayya Uthirakumar, and Chang-Hee Hong, "Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency," Opt. Express 19, 3637-3646 (2011)
http://www.opticsinfobase.org/vjbo/abstract.cfm?URI=oe-19-4-3637

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References

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Schnitzer, I.
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Wang, S. C.
Wu, L. W.
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Wuu, D. S.
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Appl. Phys. Lett.

I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett. 63(16), 2174–2176 (1993). [CrossRef]
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H. G. Hong, S. S. Kim, D. Y. Kim, T. H. Lee, J. O. Song, J. H. Cho, C. Sone, Y. Park, and T. Y. Seong, “Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process,” Appl. Phys. Lett. 88(10), 103505 (2006). [CrossRef]
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Electrochem. Solid-State Lett.

J. H. Kang, H. G. Kim, J. H. Ryu, H. K. Kim, H. Y. Kim, J. Joo, M. S. Lee, Y. J. Park, P. Uthirakumar, and C. H. Hong, “Enhancement of Light Output Power in InGaN/GaN LEDs with Nanoroughed Hemispherical Indium Tin Oxide Transparent Ohmic Contacts,” Electrochem. Solid-State Lett. 13(2), D1–D3 (2010). [CrossRef]

IEEE Electron Device Lett.

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IEEE J. Sel. Top. Quantum Electron.

R. H. Horng, Y. L. Tsai, T. M. Wu, D. S. Wuu, and C. H. Chao, “Investigation of Light Extraction of InGaN LEDs With Surface-Textured Indium Tin Oxide by Holographic and Natural Lithography,” IEEE J. Sel. Top. Quantum Electron. 15(5), 1327–1331 (2009). [CrossRef]

IEEE Photon. Technol. Lett.

T. H. Hsueh, J. K. Sheu, H. W. Huang, J. Y. Chu, C. C. Kao, H. C. Kuo, and S. C. Wang, “Enhancement in light output of InGaN-based microhole array light-emitting diodes,” IEEE Photon. Technol. Lett. 17(6), 1163–1165 (2005). [CrossRef]

Jpn. J. Appl. Phys.

J. H. Kang, H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, P. Uthirakumar, N. Han, and C. H. Hong, “Improvement of Light Output Power in InGaN/GaN Light-Emitting Diodes with a Nanotextured GaN Surface Using Indium Tin Oxide Nanospheres,” Jpn. J. Appl. Phys. 48(10), 102104 (2009). [CrossRef]

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2009, Kang, Jpn. J. Appl. Phys.
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2009, Lee, IEEE Electron Device Lett.
2007, Kim, Appl. Phys. Lett.
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2004, Fujii, Appl. Phys. Lett.
1999, Cao, Appl. Phys. Lett.
1996, Mori, Appl. Phys. Lett.
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