Abstract

We report the first demonstration to our knowledge of an ultrabroad emission laser using $\mathrm{InGaAs}∕\mathrm{GaAs}$ quantum dots by cycled monolayer deposition. The device exhibits a lasing wavelength coverage of $\sim 40\mathrm{nm}$ at an $\sim 1160\mathrm{nm}$ center wavelength at room temperature. The broadband signature results from the superposition of quantized lasing states from highly inhomogeneous dots.

© 2006 Optical Society of America

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