Abstract
We demonstrate the possibility to create materials with chosen refractive indices and a strong birefringence in the terahertz range by etching of patterns with appropriate filling factors in a dielectric substrate. We show that by using deep inductive plasma etching of silicon wafers, it is possible to achieve a birefringence as high as 1.2 in an thick layer. The resulting stacks were used as building blocks for a photonic crystal displaying sharp defect mode peaks in transmittance.
© 2008 Optical Society of America
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