Abstract

A cw $\mathrm{Pr}\text{:}\mathrm{Y}\mathrm{Al}{\mathrm{O}}_{\mathrm{3}}$ microchip-laser operation in the near-IR spectral region is reported. A microchip resonator was formed by dielectric mirrors directly deposited on the $\mathrm{Pr}\text{:}\mathrm{Y}\mathrm{Al}{\mathrm{O}}_{\mathrm{3}}$ crystal surfaces. For active medium pumping, a GaN laser diode providing up to $1\mathrm{W}$ of output power at ~448 nm was used. $139\mathrm{mW}$ of laser radiation at $747\mathrm{nm}$ wavelength has been extracted from the microchip-laser system. Slope efficiency related to the incident pumping power was ~25%.

© 2010 Optical Society of America

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