Abstract
We describe a pulsed terahertz (THz) emitter that uses a rapidly oscillating, high-voltage bias across electrodes insulated from a photoconductor. Because no carriers are injected from the electrodes, trap-enhanced electric fields do not form. The resulting uniform field allows excitation with a large laser spot, lowering the carrier density for a given pulse energy and increasing the efficiency of THz generation. Compared to a dc bias, less susceptibility to damage is observed.
© 2011 Optical Society of America
Full Article | PDF ArticleMore Like This
Kimani K. Williams, Z. D. Taylor, J. Y. Suen, Hong Lu, R. S. Singh, A. C. Gossard, and E. R. Brown
Opt. Lett. 34(20) 3068-3070 (2009)
Prashanth C. Upadhya, Wenhui Fan, Andrew Burnett, John Cunningham, A. Giles Davies, Edmund H. Linfield, James Lloyd-Hughes, Enrique Castro-Camus, Michael B. Johnston, and Harvey Beere
Opt. Lett. 32(16) 2297-2299 (2007)
André Dreyhaupt, Stephan Winnerl, Manfred Helm, and Thomas Dekorsy
Opt. Lett. 31(10) 1546-1548 (2006)