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Trap-state-assisted white light emission from a CdSe nanocrystal integrated hybrid light-emitting diode |
Optics Letters, Vol. 36, Issue 6, pp. 802-804 (2011)
http://dx.doi.org/10.1364/OL.36.000802
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Abstract
This Letter reports on the fabrication of hybrid white-light-emitting diodes made of semiconductor nanocrystals (NCs) integrated on InGaN/GaN LEDs. Using core type and core/shell type CdSe NCs, the white light properties are systematically engineered for white light generation with high color rendering index (CRI). Unlike CdSe/ZnS core/shell NCs, which exhibited a unique narrowband edge emission, core type CdSe NCs offered extended broad emission toward orange/red wavelengths associated with deep trap states. Consequently, the light-emitting properties of the devices showed strong dependence on the type of NCs used, and devices with CdSe NCs offered admirable characteristics, such as Commission Internationale d’Eclairage coordinates of (0.356, 0.330) and a CRI as high as 87.4.
© 2011 Optical Society of America
OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.5230) Optoelectronics : Photoluminescence
(160.4236) Materials : Nanomaterials
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices
ToC Category:
Optical Devices
History
Original Manuscript: January 10, 2011
Manuscript Accepted: January 21, 2011
Published: March 7, 2011
Virtual Issues
Vol. 6, Iss. 4 Virtual Journal for Biomedical Optics
Citation
S. Chandramohan, Beo Deul Ryu, Hyun Kyu Kim, Chang-Hee Hong, and Eun-Kyung Suh, "Trap-state-assisted white light emission from a CdSe nanocrystal integrated hybrid light-emitting diode," Opt. Lett. 36, 802-804 (2011)
http://www.opticsinfobase.org/vjbo/abstract.cfm?URI=ol-36-6-802
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