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Applied Optics

Applied Optics


  • Vol. 33, Iss. 8 — Mar. 10, 1994
  • pp: 1492–1497

Self-linearized analog differential self-electro-optic-effect device

Eunezio A. De Souza, Luca Carraresi, Gary D. Boyd, and David A. B. Miller  »View Author Affiliations

Applied Optics, Vol. 33, Issue 8, pp. 1492-1497 (1994)

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We describe, demonstrate, and characterize an analog self-electro-optic-effect device that gives a difference between two optical output powers that is linearly proportional to an electrical or an optical drive. Such a device should permit bipolar (positive and negative) processing in novel image processing arrays. The device is able to operate over a range of more than 4 orders of magnitude of optical power from 50 nW to 2.5 mW, corresponding to uniform incident intensities as low as 3.3 mW/cm2. The frequency response (3-dB limit) varies linearly from 7 kHz at 1-μW absorber power to 3.5 MHz at 1 mW of absorbed powers.

© 1994 Optical Society of America

Original Manuscript: June 3, 1993
Published: March 10, 1994

Eunezio A. De Souza, Luca Carraresi, Gary D. Boyd, and David A. B. Miller, "Self-linearized analog differential self-electro-optic-effect device," Appl. Opt. 33, 1492-1497 (1994)

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  1. D. A. B. Miller, “Quantum-well self-electro-optic effect devices,” Opt. Quantum Electron. 22, S61–S98 (1990).
  2. A. L. Lentine, D. A. B. Miller, “Evolution of the SEED technology: bistable logic gates to optoelectronic smart pixels,” IEEE J. Quantum Electron. 29, 655–669 (1993). [CrossRef]
  3. D. A. B. Miller, D. S. Chemla, T. C. Damen, T. H. Wood, C. A. Burrus, A. C. Gossard, W. Wiegmann, “The quantum well self-electrooptic effect device: optoelectronic bistability and oscillation, and self-linearized modulation,” IEEE J. Quantum Electron. QE-21, 1462–1476 (1985). [CrossRef]
  4. D. A. B. Miller, “Novel analog self-electrooptic-effect devices,” IEEE J. Quantum Electron. 29, 678–698 (1993). [CrossRef]
  5. E. A. De Souza, L. Carraresi, G. D. Boyd, D. A. B. Miller, “Analog differential self-linearized quantum-well self-electro-optic-effect modulator,” Opt. Lett. 18, 974–976 (1993). [CrossRef] [PubMed]
  6. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, C. A. Burrus, “Electric field dependence of optical absorption near the band gap of quantum-well structures,” Phys. Rev. B 32, 1043–1069 (1985). [CrossRef]
  7. L. M. F. Chirovsky, N. W. Focht, J. M. Freund, G. D. Guth, R. E. Leibenguth, F. J. Przybylek, L. E. Smith, L. A. D’Asaro, A. L. Lentine, R. A. Novotny, D. B. Buchholz, “Large arrays of symmetric self-electro-optic effect devices,” in Photonic Switching, H. S. Hinton, J. W. Goodman, eds., Vol. 8 of OSA Proceedings Series (Optical Society of America, Washington, D.C., 1991), pp. 56–59.
  8. A. M. Fox, D. A. B. Miller, G. Livescu, J. E. Cunnigham, W. Y. Yan, “Quantum well carrier sweep out: relation to electroabsorption and exciton saturation,” IEEE J. Quantum Electron. 27, 2281–2295 (1991). [CrossRef]

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