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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 15, Iss. 15 — Jul. 23, 2007
  • pp: 9152–9156

AlF3 thin films deposited by reactive magnetron sputtering with Al target

Cheng-Chung Lee, Bo-Huei Liao, and Ming-Chung Liu  »View Author Affiliations

Optics Express, Vol. 15, Issue 15, pp. 9152-9156 (2007)

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Aluminum fluoride thin films have been deposited by magnetron sputtering of an aluminum target with CF4, and CF4 mixed O2 as the working gas onto a room temperature substrate. The quality of the coated AlF3 film applied with 25W sputtering power using CF4 mixed 5% O2 was better than for films deposited using conventional methods. The extinction coefficient of AlF3 was smaller than 6.0×10-4 in the wavelength range of 190nm to 250nm. Single layer antireflection coatings on both sides of a fused silica substrate increased the transmittance from less than 91% for a bare substrate to higher than 96% in the wavelength range between 190nm to 250nm.

© 2007 Optical Society of America

OCIS Codes
(310.1620) Thin films : Interference coatings
(310.1860) Thin films : Deposition and fabrication

ToC Category:
Thin Films

Original Manuscript: May 21, 2007
Revised Manuscript: July 5, 2007
Manuscript Accepted: July 10, 2007
Published: July 11, 2007

Cheng-Chung Lee, Bo-Huei Liao, and Ming-Chung Liu, "AlF3 thin films deposited by reactive magnetron sputtering with Al target," Opt. Express 15, 9152-9156 (2007)

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