A novel buried photomixer for integrated photonic terahertz devices is proposed. The active region of the mesa-structure InGaAs photomixer is buried in an InP layer grown by metalorganic chemical vapor deposition (MOCVD) to improve heat dissipation, which is an important problem for terahertz photomixers. The proposed photomixer shows good thermal properties compared to a conventional planar-type photomixer. The MOCVD regrowth process indicates the possibility for THz photomixers to be integrated monolithically with conventional photonic devices.
© 2013 Optical Society of America
Original Manuscript: September 26, 2013
Revised Manuscript: November 19, 2013
Manuscript Accepted: November 19, 2013
Published: December 13, 2013
Kiwon Moon, Dong Woo Park, Il-Min Lee, Namje Kim, Hyunsung Ko, Sang-Pil Han, Donghun Lee, Jeong-Woo Park, Sam Kyu Noh, and Kyung Hyun Park, "Low-temperature-grown InGaAs terahertz photomixer embedded in InP thermal spreading layer regrown by metalorganic chemical vapor deposition," Opt. Lett. 38, 5466-5469 (2013)